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| inchange semiconductor product specification silicon npn power transistors 2SD1047 description ? complement to type 2sb817 ? with to-3pn package applications ? power amplification ? low frequency and audio band pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 12 a i cm collector current-peak 15 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -40~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1047 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 140 v v (br)cbo collector-base breakdown voltage i c =5ma ;i e =0 160 v v (br)ebo emitter-base breakdown voltage i e =5ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 2.5 v v be base-emitter on voltage i c =1a;v ce =5v 1.5 v i cbo collector cut-off current v cb =80v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 60 200 h fe-2 dc current gain i c =6a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 15 mhz c ob collector output capacitance f=1mhz;v cb =10v 210 pf switching times t on turn-on time 0.26 | s t s storage time 6.88 | s t f fall time i c =1.0a; i b1 =-i b2 =0.1a v cc =20v ,r l =20 |? 0.68 | s ? h fe-1 classifications d e 60-120 100-200 inchange semiconductor product specification 3 silicon npn power transistors 2SD1047 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon power transistors 2SD1047 i b =0 |
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